Thin film magnetic memory device with memory cell having magnetic tunnel junction

设有含磁隧道结的存储单元的薄膜磁性体存储装置

Abstract

在MRAM器件中,将存储块(MB)分为四个区(A~D),对应于四个区(A~D)分别设置四个恒流电路(13~16)。位线驱动器(10~12)从四个区(A~D)按每区两条选择八条位线(BL),在各位线(BL)上流入对应于该位线(BL)的恒流电路的输出电流。因此,能够稳定流入位线(BL)的写入电流,且能够进行稳定的数据写入。

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